Introduction to the control principle of resistivity of single crystal silicon 2

1. Doping concentration: The higher the concentration of dopants, the more free carriers (electrons or holes) there are, resulting in a decrease in resistivity. By precisely controlling the amount of dopant during the doping process, the desired resistivity can be obtained.diode

2. Doping type: Using different types of dopants (n-type or p-type) can control the carrier types inside single crystal silicon, thereby affecting the material's resistivity.

3. Crystal growth conditions: The temperature, pressure, and cooling rate during the crystal growth process can affect the distribution uniformity of dopants in the crystal, thereby affecting the resistivity.

4. Compensatory doping: Sometimes dopants of the opposite type to the main dopant are intentionally introduced to reduce the number of free charge carriers and thus increase resistivity.diode

5. Heat treatment: High temperature annealing can change the distribution of dopants in the crystal and affect the electrical resistivity.

6. Crystal orientation: Different crystal orientations (such as<100>or<111>) can also have an impact on resistivity, as it determines the density of atomic arrangement within the crystal.diode