Introduction to the control principle of resistivity of single crystal silicon 1

As a semiconductor material, the resistivity of monocrystalline silicon is achieved by controlling the doping concentration and type. Doping refers to the introduction of trace amounts of other elemental atoms into pure silicon crystals, typically third group elements (such as boron) or fifth group elements (such as phosphorus and arsenic). The principle of doping is based on the band theory in solid-state physics and the concept of charge carriers.diode,

Doping principle

When the fifth group element (an additional valence electron) is doped into the silicon lattice, additional free electrons are generated that can move within the lattice, increasing the conductivity of the material and forming an n-type semiconductor. On the contrary, when the third group element (one less valence electron) is doped into the silicon lattice, "holes" (positions lacking electrons) are generated in the lattice, which can also move and participate in conduction like electrons, forming p-type semiconductors.diode,

Resistivity control

The resistivity of single crystal silicon is controlled by the following factors:diode,