How to identify IGBT insulated gate bipolar transistors? 1

IGBT (Insulated Gate Bipolar Transistor) is a commonly used BQ2057TTS power semiconductor device with high voltage and high current tolerance. IGBT is composed of a P-type parasitic bipolar structure (NPN or PNP type) and a MOSFET (metal oxide semiconductor field-effect transistor) structure.

To identify IGBT insulated gate bipolar transistors, the following steps can be taken:

1. Appearance features: IGBT Transistor typically have three pins, namely collector (C), emitter (E), and gate (G). Visually, there is usually a metal or plastic package available in various forms, such as TO-220, TO-247, SOT-223, etc.

2. Checking device model: The model of IGBT transistor is usually marked on the package or device, and the device model and specifications can be confirmed by checking the model information manual.

3. Electrical parameters: The electrical parameters of IGBT transistors are important factors for identification. Some important parameters include maximum collector current (IC), maximum collector emitter voltage (VCE), maximum gate emitter voltage (VGE), switching speed, etc. These parameters can usually be found in the data manual of the device.