What is an insulated gate bipolar transistor? The structure, characteristics, principles, applications, installation, and development history of insulated gate bipolar transistors 3

6、 Development History

The development history of Insulated Gate Bipolar Transistor (IGBT) can be traced back to the 1980s. At that time, in order to meet the requirements of power electronic devices for switching speed and on resistance, Sanyo Corporation of Japan first developed IGBT and applied it to practical products.

In the 1990s, IGBT was widely applied and researched, and its structure and process technology were further optimized, resulting in significant improvements in performance. At this stage, IGBT began to be widely used in power electronic converters, electric vehicles, and renewable energy fields.Transistor

In the 21st century, with the advancement of semiconductor manufacturing technology, the performance of IGBT has been further improved. The on resistance and switching losses of the third-generation IGBT have been significantly reduced, making it more widely used in high-power applications. Transistor

At present, IGBT has developed to the fourth generation, and its biggest feature is its ultra-low conduction voltage and fast switching speed. This makes the application of IGBT in power electronic equipment more extensive, and also provides important technical support for the development of new energy electric vehicles, smart grids and other fields. Transistor