High voltage field-effect transistor N-channel MOSFET 2

4、 Working principle

Fqa24n60 is an enhanced channel MOSFET. diode

When the gate voltage is higher than the threshold voltage, an electric field is formed between the gate and the channel, which increases the carrier concentration in the channel and leads to conduction.

When the gate voltage is lower than the threshold voltage, the electric field is suppressed and the carrier concentration in the channel decreases, resulting in cutoff.diode

5、 Parameter specifications diode

1. Rated working voltage (vds): 600v

2. Rated current (id): 24 amps

3. On resistance (rds (on)): 0.21 Ω

4. Gate source voltage (vgs): ± 30v

5. Working temperature range: -55 ℃ to 150 ℃

6、 Market application  diode

Widely used in the field of power electronics, such as power management, electric vehicles, solar inverters, etc.

Due to its high voltage carrying capacity and low on resistance, it can meet the needs of high-power applications.