Infineon launches next generation high-performance metal oxide semiconductor field-effect transistor CoolMOS MOSFET 2

Design more efficient, compact, lightweight, and cool power products with extremely low power consumption and unit area on resistance. At the same time, the switch control performance and resistance to parasitic inductance and capacitance characteristics of the circuit board have also been significantly improved.diode  Compared to the CP series design, CoolMOS C6 simplifies the PCB system layout. Specifically, this means that within the CoolMOS C6 series, the gate charge, voltage/current slope, and internal gate resistance have reached an optimized and harmonious state, and even gate resistances as low as zero ohms will not produce excessively high voltage or current slopes. In addition, C6 devices have excellent body diode hard commutation resistance, thus avoiding the use of expensive fast body diode components.diode

Infineon believes that the ease of use and high energy efficiency of the previous generation product CoolMOS C3, coupled with higher light load efficiency, will make the CoolMOS C6 series the benchmark for hard switch applications. On the other hand, the extremely low electrical energy stored in the output capacitor and outstanding hard commutation tolerance make this device an ideal choice for resonant switch products.diode