Infineon launches next generation high-performance metal oxide semiconductor field-effect transistor CoolMOS MOSFET 1

At the China International Power Exhibition, Infineon recently launched the next-generation CoolMOS MOSFET 600V CoolMOS C6 series, which combines the advantages of super junction technology and traditional high-voltage devices. With the 600V CoolMOS C6 series devices, the energy efficiency of energy conversion products such as PFC (Power Factor Correction) or PWM (Pulse Width Modulation) stages can be significantly improved. The new C6 technology combines the advantages of modern super junction structures and compensation devices including ultra-low on resistance per unit area (such as TO-220 packaging, with a resistance of only 99 milliohms), while also having lower capacitance switching losses, simpler switching characteristic control characteristics, and more robust and durable enhanced body diodes.

The C6 series is the fifth generation CoolMOS metal oxide semiconductor field-effect transistor (MOSFET) launched by Infineon. Infineon has further improved the switching speed and reduced the on resistance based on previous generations of products such as CoolMOS C3 and CoolMOS CP. CoolMOS C3 is a widely used product line, while the CP series can meet the needs of various specialized applications that require the highest switching speed and lowest on resistance.diodes

The latest 600V CoolMOS C6 device combines the advantages of the CoolMOS C3 and CoolMOS CP product series. For example, power supply manufacturers can benefit from the advantages of the super junction CP series, including extremely low capacitance loss  diodes