Yipu launches the second generation eGaN field-effect transistor

Recently, Yipu Power Conversion Company announced the launch of EPC2010, the latest member of the second-generation eGaN field-effect transistor (FET) series. This product has superior performance, is not only environmentally friendly and lead-free, but also complies with the RoHS (Restriction of Hazardous Substances) directive.

EPC2010 FET is a 200VDS device with a maximum RDS (ON) value of 25m Ω and a gate applied voltage of 5V. This eGaN FET has significant performance advantages compared to the first generation EPC1010 eGaN device. EPC2010 increased the pulse current rating to 60A (while EPC1010 was 40A) and improved the RDS (ON) value at very low gate voltages, resulting in lower capacitance values. Compared with advanced silicon power MOSFETs with the same on resistance value, EPC2010 has a smaller volume and much higher switching performance.transistor  There are many applications that benefit from higher performance eGaN FETs, including high-speed DC/DC power supplies, load point converters, Class D audio amplifiers, hardware switches, and high-frequency circuits. Alex Lidow, co-founder and CEO of Yipu Corporation, said, "Yipu is the first company to commercialize gallium nitride power field-effect transistors. With the launch of the second generation product, Yipu has further improved the performance benchmark of gallium nitride field-effect transistors. In addition, Yipu's new generation eGaN product is also the first lead-free and RoHS compliant gallium nitride field-effect transistor