EPC launches second-generation gallium nitride field-effect transistor

EPC, a power conversion company, announced the launch of EPC2014, the latest member of the second-generation enhanced performance gallium nitride field-effect transistor (eGaN FET) series. EPC2014 adopts lead-free packaging that complies with RoHS (Restriction of Hazardous Substances) regulations to enhance its high-frequency switching performance and has environmental characteristics.

EPC2014 FET is a 40VDS and 10V component with an area of 1.87 square millimeters. When the gate voltage is 5V, the maximum RDS (ON) value is 16m Ω. Compared with the previous generation EPC1014 component, the new generation EPC2014 component has significantly higher performance advantages, with a maximum junction temperature rating increased to 150 ℃, and its performance is comprehensively enhanced at lower gate voltages.transistor

Compared with advanced silicon power MOSFETs with the same on resistance, EPC2014 has a much smaller volume, but its switching performance is many times higher. The applications of the new eGaN FET include high-speed DC/DC power supplies, load point converters, Class D audio amplifiers, hard switches, and high-frequency circuits.transistor