Practical Sharing | High Power Gallium Nitride Field Effect Transistor: High Performance, High Efficiency, and High Reliability 2

2、 Characteristics

1. High power: Gallium nitride materials have high electron mobility and breakdown voltage, allowing GaN FETs to withstand high power. Compared to traditional silicon-based power devices, GaN FET has a higher power density.diode

2. High efficiency: GaN FET has the characteristics of low on resistance and low switching loss, which makes it have high conversion efficiency. This enables GaN FET to more effectively utilize electrical energy in power amplification and RF applications.diode

3. High reliability: Due to the characteristics of gallium nitride material, GaN FET has higher operating temperature and lower leakage current. This makes it have good thermal stability and reliability, and can work stably for a long time in harsh environments.diode

3、 Application Fields

1. Communication system: GaN FET has a wide range of applications in RF power amplifiers. Due to its high power and efficiency, it can provide stronger signal amplification and faster data transmission rates.