ferroelectric field effect transistor 8

〔1〕scott j f，araujo c a.ferroelectric memories〔j〕.science,1989,246：1400～1405.〔2〕geideman w a.progress in ferroelectric memory technology〔j〕ieee trans ultrason ferroelectron freq control,1991,38:704～741.〔3〕wu y s.a device,metal-ferroelectric-semiconductor transistor〔j〕.ieee trans electron dev，1974,ed-21：499～504.〔4〕kalkur t s,kulkarni j,lu y c，et al.metal-diode ferroelectric-semiconductor characteristics silicon〔j〕.ferroelectrics,1991,116：135～146.〔5〕brown a r,pomp a, de leeuw d m,et al.precursor route pentacene metal-insulator-semiconductor field-effect transistors〔j〕.j appl phys,1996,79(4)：2136～2138.〔6〕tadahiko hiral,yoshihide fujisaki,kazuhito 1997,36(9b)：5908～5911.〔7〕jun yu,zhao jianhong,wenli zhou, etdiode al.formationandcharacteristicsofpb(zr,ti)o3field-effect transistor with a sio2buffer layer〔j〕.appl pyhs lett,1997,70(4)：490～492.〔8〕tadahiko h,kazuhiro t,takeharu 1994,33(9b)：5219～5222.〔9〕watanabe y,tanamura m,matsumots y.memory retention and switching speed of ferroelectric field-effect in (pb,la)(ti,zr)o3/la2cuo4:srheterostructure〔j〕.jpn j appl phys,1996,35(2b)：1564～1568.〔10〕sinharoy s,bulhay h,lampe d r, et al.integration of ferroelectric thin films into nonvolatile memories〔j〕.j voc sch technol，1992,a10(4)：1554～1561.〔11〕buhay h,sinharoy s,kasner w h.pulsed laser deposition and ferroelectricdiode characterization of bismuth titanate films〔j〕.appl phys lett,1991,58(14)：1470～1472.〔12〕maffei n,krupaindhi s b.electrical characteristics of excimer laser ablated bismuth titanate films on silicon〔j〕.j appl phys,1992,72(8)：3617～3621.〔13〕lin y,zhao b r,peng h b， et al.growthandpolarizationfeaturesofhighly(100)oriented pb(zr0.53ti0.47)o3 films on si with ultrathin sio2 buffer layer〔j〕.appl phys lett,1998,73(19)：2781～2783.〔14〕mathews s,ramesh r,venkatesan t， et al.ferroelectric field effect transistor based on epitaxial perovskite heterostructures〔j〕.science,1997,276：238～241.〔15〕1997,19(2)：112～138.〔16〕kazushi amanuma,takashi hase,yoichi miyasaka.preparation and ferroelectric properties of srbi2ta2o9 thin films〔j〕.appl pyhs lett,1995,66(2)：221～223.〔17〕joshi p c,ryu s o，zhang x， et al.properties of srbi2ta2o9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique〔j〕.appl pyhs lett,1997,70(9)：1080～1082.〔18〕takashi hayashi,hiroshi takahashi,takuya hara.chemical processing and dielectric properties of ferroelectric srbi2ta2o9thin films〔j〕.jpn j appl phys,1996,35(9b)：4952～4955.〔19〕ichiro koiwa,yukihisa okada,juro mita，et al.role of excess bi in srbi2ta2o9 thin films prepared using chemical liquid deposition and sol-gel method〔j〕.jpn j appl pyhs,1997,36(9b)：5904～5907.diode