ferroelectric field effect transistor 7

Table 1sbto's dielectric properties (800 ℃, 1 h)

Film making method ε r tg δ

mod（a） 300 140 0.04 2.0 73

mod（b） 400 180 0.03 4.5 60diode

Sol-gel (c-axis orientation) 90 78 0.05 1.6 110

Sol-gel (non oriented) 390 100 0.06 2.8 108 diode

Ichiro Koiwa et al. [19] prepared sbto ferroelectric thin films using chemical liquid deposition and sol-gel methods, and no fatigue was observed after 3 × 1012 switching cycles. Tadahiko Hirai et al. [6] used the mod method to fabricate a ffet with an Al/SrBi2TA2O9/CeO2/Si (n-channel) structure. From the current perspective, the film-forming temperatures of various methods are relatively high, which is not conducive to compatibility with semiconductor processes. Especially from the perspective of being used in ffet devices, issues such as sbto/si interface and compatibility between thin film materials and semiconductor processes need to be further studied.diode