ferroelectric field effect transistor 6

3.3 Srbi2ta2o9 Iron Thin Film Srbi2ta2o9 (abbreviated as sbto) is a layered perovskite structure with lattice constants of a=b=0.39nm and c=2.51nm. diode The biggest advantage of sbto ferroelectric thin film is its high fatigue durability, generally no fatigue occurs after 109 switching cycles, making it the best ferroelectric thin film material with fatigue properties to date. Its leakage current density is generally lower than 10-8a/cm2, diode and it has good electrical insulation performance, becoming one of the candidate materials for ffet hotspots. K. Amanuma et al. [16] prepared sbto thin film by solution method, with residual polarization strength pr=10 × 10-6c/cm2 and coercive field strength ec=38 × 103v/cm. p.c. The study by Joshi et al. [17] showed that when w (bi2O3) exceeded 30%, the resulting film had the best performance. Takashi Hayashi et al. [18] compared the preparation of sbto films by mod method and sol-gel method, and Table 1 shows their results diode