ferroelectric field effect transistor 5

By adding these transition layers, diode the storage characteristics of ferroelectric field-effect transistors have been improved to a certain extent, but the fundamental problems that directly affect the storage characteristics of ferroelectric memory devices, such as ferroelectric/semiconductor interface, depolarization, diode leakage current, and fatigue, have not been fundamentally solved. 2.3 Full perovskite structure ferroelectric field-effect transistor Watanabe et al. [9] used PLZT and perovskite structure semiconductor materials (Sr doped La2CUO4) as gate insulators and gate region semiconductors, respectively. A prototype of ferroelectric field-effect transistor was fabricated on an insulator substrate SrTiO3 (100), diode and it is reported that its signal holding time can reach about one month. However, the ferroelectric field-effect transistor with this structure has compatibility issues with semiconductor integrated circuit processes due to its fabrication on an insulator substrate. Mathews et al. [14] reported the epitaxial heterojunction of pzt/lcmo (la0.7ca0.3mno3: p-type semiconductor material) and fabricated a fully perovskite structure ferroelectric field-effect transistor (pzt/lcmo FET) from it, as shown in Figure 2. This all perovskite structure has great potential for improving interface states and enhancing retention due to its structural matching at the f/s interface.diode