ferroelectric field effect transistor 4

2 types of ffet structures

2.1 mfs-fety.s.wu [3] produced the first mfs fet in 1974, with a gate made of bi4ti3o12 ferroelectric thin film. In the future, many ferroelectric materials such as BAMGF4, (BA, SR) TiO3, Pb (Zr, Ti) O3, etc. have been used as gate ferroelectric thin film materials for MFS-FET. However, due to the interface reaction and interdiffusion between f/s, the measured c-v curve is generally of the charge injection type [4,5,12]. This injection type storage cannot be permanently stored because carriers are injected into the ferroelectric thin film, which partially or completely cancels out the remaining polarized charges. At this point, diode the semiconductor surface will not generate induced charges, and the conditions for channel conduction or cutoff are lost. MFS fet loses its storage function. Keeping the time short has become a very serious issue.diode  In order to prevent the injection of semiconductor surface charge carriers into ferroelectric thin films, many people use a transition layer between the ferroelectric thin film and the semiconductor to reduce interface states and achieve polarized storage. There have been many literature reports on this area of work. For example, Al/SrBi2Ta2O9/CeO2/Si [6], Au/PZT/SiO2/Si structure [7], metal/PbTiO3/CeO2/Si structure [8], and metal/BIT/CaF2/Si structure [11] have all achieved polarized storage.diode