ferroelectric field effect transistor 3

The storage mechanism of ffet is called polarized storage [10]. If there are donor and acceptor interface states at the ferroelectric/semiconductor (f/s) interface, corresponding to a positive applied polarization voltage,diode  negative charges moving along the direction of the electric field to the interface will be trapped in the acceptor interface state, while positive induced charges will be generated on the silicon surface. At this time, the n-type silicon surface is not in an accumulated state but becomes depleted or even inverted, and the channel should have been turned off but turned on instead. On the contrary, corresponding to the negative polarization voltage applied, diode the positive charges moving along the direction of the electric field to the interface will be trapped in the donor interface state, thus generating negative induced charges on the silicon surface. At this time, the silicon surface will accumulate and the channel will be turned off. In this way, the applied polarization voltage information for channel on/off storage is completely opposite to that of polarization type storage, and this storage mechanism of ffet is called injection type storage [11]. Two different storage mechanisms correspond to two different f/s interface states, and their c-v characteristics are different: the c-v curve hysteresis direction of the mfs structure corresponding to polarized storage is clockwise for p-type substrates, and counterclockwise for n-type substrates. The hysteresis direction of the c-v curve corresponding to injection type storage is completely opposite.diode