ferroelectric field effect transistor 1

Wang Hua, Yu Jun, Zhou Wenli, Wang Yunbo, Xie Jifan, Zhou Dongxiang, Zhu Lili

Abstract: This article introduces the basic structure, storage mechanism, and fabrication method of ferroelectric field-effect transistor (FET), summarizes the improvement of its structural design, the progress of ferroelectric thin film application in FET, explores the influence of ferroelectric thin film materials, transition layers, structural design, different film formation methods and processes on the storage characteristics of FET, and reviews the research status and existing problems of FET. Keywords: ferroelectric thin film; Ferroelectric field-effect transistor; Storage Characteristics: Image Classification Number: tn304.9 Document Identification Code: a Article Number: 1001-2028 (2000) 02-0019-03

Ferroelectric thin film materials have excellent ferroelectric, piezoelectric, transition pyroelectric, electro-optic, and nonlinear optical properties, and have broad application prospects in fields such as microelectronics, optoelectronics, integrated optics, and microelectromechanical systems. transition They have become one of the hot spots in the research of new functional materials internationally. Especially with a series of breakthroughs in ferroelectric thin film preparation technology, high-performance ferroelectric thin films have been successfully prepared, with operating voltages ranging from 3 to 5 volts, and can be integrated with Si or GaAs circuits. The compatibility between ferroelectric thin film preparation processes and IC processes has become possible, greatly promoting the development of ferroelectric thin film preparation and device application research [1,2]. Among these devices, ferroelectric field-effect transistors (FETs) not only have the characteristics of fast switching, high density, permanence, and radiation resistance, but also achieve non-destructive readout, which has attracted great attention from ferroelectrics and has been widely applied in basic research [3-9]. This article summarizes the research reports on ferroelectric field-effect transistors at home and abroad in recent years, introducing the structure, storage principle, and application progress of ferroelectric materials in FET.transition