field effect transistor 1

Field effect transistor is a unipolar type (with only one type of carrier participating in conduction) transistor, abbreviated as field-effect transistor, which belongs to voltage controlled semiconductor devices.

Characteristics: Field effect transistor have high input impedance, low power consumption, wide safe working area, and easy integration, making them widely used in digital circuits, communication equipment, and instrumentation.

Classification: There are two commonly used types: junction type and insulated gate type (i.e. MOS transistor), each of which is further divided into N-channel and P-channel. The three electrodes of a field-effect transistor are the source (S), gate (G), and drain (D).

The circuit symbol for field-effect transistors. Among them, N-channel junction field-effect transistor, P-channel junction field-effect transistor, P-channel enhanced insulated gate transistor, N-channel enhanced insulated gate transistor, P-channel SN74LVC257ADRG4. html "target=" -blank "title=" SN74LVC257ADRG4 ">SN74LVC257ADRG4 depletion insulated gate transistor, N-channel depletion insulated gate transistor.

1. Technical parameters of field-effect transistors: The technical parameters of field-effect transistors mainly include pinch off voltage UP (junction type), turn-on voltage UT (MOS transistor), saturated drain current II: 6S, DC input resistance, transconductance, noise figure, and maximum operating frequency.