Various classifications of crystal diodes 3

6. Planar diode

A PN junction formed by selectively diffusing only a portion of P-type impurities on a semiconductor single crystal wafer (mainly N-type silicon single crystal wafer) and utilizing the shielding effect of the silicon wafer surface oxide film. Therefore, there is no need to adjust the PN junction area for drug corrosion. Due to the flatness of the semiconductor surface, it is named. Moreover, the surface of PN bonding is recognized as a type with good stability and long lifespan due to being covered by an oxide film. Initially, the semiconductor materials used were formed using epitaxial methods, hence the planar type was also referred to as epitaxial planar type. For planar diodes, there seem to be few models used for high current rectification, while there are many models used for low current switching.

7. Alloy diffusion diode

It is a type of alloy. Alloy materials are easily diffused materials. By cleverly doping difficult to produce materials with impurities, they can diffuse together with the alloy to obtain the appropriate concentration distribution of impurities in the formed PN junction. This method is suitable for manufacturing high-sensitivity varactor diodes.

8. Epitaxial diode

A diode formed by manufacturing a PN junction through the process of extending the surface length. Manufacturing requires extremely advanced technology. Due to the ability to freely control the distribution of impurities at different concentrations, it is suitable for manufacturing high-sensitivity varactor diodes.