Classification of Crystal Diodes (2) 6

15. Schottky Barrier Diode is a diode with Schottky characteristics and a "metal semiconductor junction". Its forward starting voltage is relatively low. In addition to materials, the metal layer can also be made of materials such as gold, molybdenum, nickel, titanium, etc. Its semiconductor materials are made of silicon or gallium arsenide, mostly N-type semiconductors. This device is conducted by majority carriers, so its reverse saturation current is much larger than that of PN junctions conducted by minority carriers. Due to the minimal storage effect of minority carriers in Schottky diodes, their frequency response is only limited by the RC time constant, making them an ideal device for high-frequency and fast switching. Its operating frequency can reach 100GHz. And MIS (metal insulator semiconductor) Schottky diodes can be used to make solar cells or light-emitting diodes.

16. Damping diodes have high reverse operating voltage and peak current, with small forward voltage drop. They are high-frequency and high-voltage rectifying diodes used in TV scanning circuits for damping and boost rectification.

17. Transient voltage suppression diode (TVP) is used to provide fast overvoltage protection for circuits. It is divided into bipolar and unipolar types, classified according to peak power (500W-5000W) and voltage (8.2V-200V).

18. Double base diode (single junction transistor) is a three terminal negative resistance device with two bases and one emitter, used in relaxation oscillation circuits and timing voltage readout circuits. It has the advantages of easy frequency adjustment and good temperature stability.

19. Light emitting diodes are made of gallium phosphide and gallium arsenide materials, with small volume and forward driven luminescence. Low working voltage, low working current, uniform light emission, long lifespan, capable of producing red, yellow, and green monochromatic light.