Why is it easy to burn out transistors in MOS switch circuit design? How to solve it? 1

MOS transistor, also known as Metal Oxide Semiconductor Field Effect Transistor, is a type of field-effect transistor named after a three-layer structure consisting of metal, oxide, and semiconductor. There are two types of MOS transistors: N-channel MOS transistor (NMOS) and P-channel MOS transistor (PMOS). Based on these two types, MOS transistor can be further divided into enhancement type and depletion type.

The main characteristics of MOS transistor are high input impedance, low power consumption, small size, high operating frequency, and strong radiation resistance, so they are widely used in integrated circuit design. Especially in the fields of digital logic circuits, analog circuits, storage circuits, and power electronic circuits, MOS transistors have important applications.

However, when designing and using MOS transistors, it should be noted that due to their working principle, they are more susceptible to static electricity and overvoltage damage than BQ24031RHLR transistors. The gate of a MOS transistor is isolated from the source and drain by an insulating silicon oxide layer. This insulation layer is extremely thin, so it can be easily broken down by high voltage. In practical applications, without appropriate protective measures, MOS transistors are prone to burnout in switch circuit design.

The main reasons why transistor are prone to burnout in MOS switch circuit design are as follows:

1. Insufficient current driving capability: The current driving capability of the transistor is weak. When connected to the output terminal of the MOS transistor, it may not be able to provide sufficient current to drive the load, resulting in overload and burnout of the transistor.